Silicon carbide carrier for wafer processing and method for maki

Details Silicon carbide carrier for wafer processing and method for maki Silicon carbide carrier for wafer processing and method for maki

1996-06-18

1998-07-07

Derrington, James

Plastic and nonmetallic article shaping or treating: processes

Gas or vapor deposition of article forming material onto...

264138, 264154, 264157, 264163, C04B 35565, B23Q 300

Patent

active

057763917

ABSTRACT:
A single piece, high purity, full density semiconductor wafer holding fixture for holding a multiplicity of wafers and consisting essentially of chemical vapor deposited silicon carbide (CVD SiC). The wafer carrier is advantageous for the fabrication of electronic integrated circuits where high temperatures and/or corrosive chemicals present, where dimensional stability of the holder is advantageous to the process or where introduction of contaminating elements is deleterious to the process. The method for making such an article comprises shaping a substrate, e.g. graphite, which on one surface has the form of the desired shape, said form comprising raised longitudinal sections to support the silicon wafers at the edges of the wafers, chemically vapor depositing a layer of silicon carbide onto the substrate, removing the substrate intact or by burning, machining, grinding, gritblasting and/or dissolving, and grinding the silicon carbide in any areas where a more precise dimension is required.

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