Method of forming tapered contact holes for integrated circuit d

Details Method of forming tapered contact holes for integrated circuit d Method of forming tapered contact holes for integrated circuit d

1981-06-22

1982-12-14

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

156653, 156657, 427 85, 427 89, 427 93, 427 95, 430314, H01L 21283, H01L 21316

Patent

active

043638309

ABSTRACT:
A process for defining improved tapered contact openings in glass coatings comprising the deposition of a layer of low temperature flowable passivating glass and the deposition of a masking layer to initially approximately define contact areas over portions of the active regions and over portions of a gate line. The first contact openings are then etched and the passivating layer caused to reflow followed by a second etch, in the previously etched areas, which second etch accurately defines the contact openings. The final etch rounds off any corners produced by the second etch to produce smoothly tapered contact openings. .circle.

REFERENCES:
patent: 2925572 (1975-12-01), Naber
patent: 3481781 (1969-12-01), Kern
patent: 4091407 (1978-05-01), Williams et al.
patent: 4224089 (1980-09-01), Nishimoto et al.
patent: 4271582 (1981-06-01), Shirai
patent: 4273805 (1981-06-01), Dawson
patent: 4299862 (1981-11-01), Donley
W. Kern et al., J. Electrochem. Soc.: vol. 117, No. 4, (Apr. 1970), "Chemical Vapor Deposition of Silicate Glasses for Use with Silicon Devices", pp. 562-573.
Y. Tanigaki et al., J. Electrochem. Soc.: vol. 125, No. 3, (Mar. 1978), "A New Self-Aligned Contact Technology", pp. 471-472.

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