Method for manufacturing semiconductor integrated circuits utili

Metal working – Method of mechanical manufacture – Assembling or joining

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29578, 148187, 156653, 156656, 156662, 357 23, 357 65, 357 68, H01L 21283, H01L 2131

Patent

active

042927285

ABSTRACT:
A method for manufacturing semiconductor integrated circuits such as metal oxide semiconductor field effect transistors having source and drain regions to which contact holes are made such that not only the contact parts of the source and the drain regions, but also both surface parts of a field oxide layer which are adjacent to the outer edges of source and drain regions, are exposed and contacted.

REFERENCES:
patent: 3887993 (1975-06-01), Okada et al.
patent: 4033797 (1977-07-01), Dill et al.
patent: 4149307 (1979-04-01), Henderson
patent: 4178605 (1979-12-01), Hsu et al.
patent: 4212684 (1980-07-01), Brower
patent: 4221045 (1980-09-01), Godejahn
patent: 4224733 (1980-09-01), Spadea

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