Method of manufacturing semiconductor device using laser beam cr

Details Method of manufacturing semiconductor device using laser beam cr Method of manufacturing semiconductor device using laser beam cr

1980-09-03

1983-03-29

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148187, 219121LF, 357 91, 427 531, H01L 21263

Patent

active

043779026

ABSTRACT:
A method of manufacturing a semiconductor device comprising a step of forming a desired opening in an insulating film formed on a single-crystalline semiconductor substrate, a step of forming an impurity-doped amorphous or polycrystalline semiconductor layer to cover the surface of said insulating film and the exposed surface of said semiconductor substrate in said opening, and a step of irradiating said semiconductor layer with a laser beam to let a portion of said semiconductor layer on said insulating film be polycrystallized or remain polycrystalline and let a portion of said semiconductor layer on said semiconductor substrate be single-crystallized to form a junction between said single-crystallized semiconductor layer portion and said semiconductor substrate.

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patent: 4272880 (1981-06-01), Pashley
Wu et al., Epitaxial Growth of Deposited Amorphous Layer by Laser Annealing, 33(2) Appl. Phys. Lett. 130 (Jul. 15, 1978).
Koyanagi et al., Appl. Phys. Letts. 35 (Oct. 1979) 621.
Klimenko et al., Sov. J. Quant. Electron. 5 (1976) 1289.
Celler et al., Appl. Phys. Letts. 32 (1978) 464.
Tseng et al., Appl. Phys. Letts. 32 (1978) 824.
Anantha et al., IBM-TDB, 22 (Jul. 1979) 575.

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