Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1981-04-27

1983-03-29

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 148187, H01L 21223

Patent

active

043779000

ABSTRACT:
A method of manufacturing an SIT or SITL device, comprising simultaneous formation of a gate doping aperture and contact apertures for a source and a drain. Firstly, a gate region is doped through the doping aperture with the contact apertures being covered by a mask. Then, a source region is doped so as to be in self-alignment relation relative to the gate region and a source contact portion is doped so as to be in self-alignment relation relative to the source region and the gate region, whereby the mask alignments are eliminated and packing density is enhanced.

REFERENCES:
patent: 3472712 (1969-10-01), Bower
patent: 3847687 (1974-11-01), Davidsohn
patent: 4125156 (1980-07-01), Dalal et al.

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