Method of manufacturing a semiconductor device utilizing simulta

Details Method of manufacturing a semiconductor device utilizing simulta Method of manufacturing a semiconductor device utilizing simulta

Filed on

1984-09-07

Date issued

1986-02-11

Examiner

Saba, William G.

Patent Class

Metal working

SubClass

Method of mechanical manufacture

SubSubClass

Assembling or joining

Other Related Categories

29576B, 29590, 29591, 148 15, 148174, 148188, 148190, 148DIG106, 148DIG123, 148DIG124, 148DIG151, 357 59, H01L 21225, H01L 21265

Type

Patent

Status

active

Patent number

045691231

Description

ABSTRACT:
A method for manufacturing semiconductor devices is presented. The method comprises the steps of opening two windows on an insulating layer covering a semiconductor substrate, and forming a polysilicon layer over the entire surface of the insulating layer and the windows. Donor and acceptor impurities are respectively implanted into the portions of the polysilicon layer corresponding to the two opening windows through the appropriate photoresists. The doped impurities are thereafter subjected to annealing to form two different conduction type regions under the two opening windows. Thereafter, a metal layer and a photoresist are deposited in order to make the metal electrodes for each conduction region. Thus, the patterning of the polysilicon can be made in self-alignment with the etching mask, and the formation of two different conduction type semiconductor regions are simultaneously attained.

REFERENCES:
patent: 3719535 (1973-03-01), Zoroglu
patent: 3847687 (1974-11-01), Davidsohn
patent: 4074304 (1978-02-01), Shiba
patent: 4283733 (1981-08-01), Aomura
patent: 4357622 (1982-11-01), Magdo et al.
patent: 4375999 (1983-03-01), Nawata et al.
patent: 4407060 (1983-10-01), Sakurai
patent: 4465528 (1984-08-01), Goto
patent: 4497106 (1985-02-01), Momma et al.

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