Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1986-04-21

1988-10-18

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 357 19, 357 40, 372 50, 372 92, H01S 319

Patent

active

047792833

ABSTRACT:
A semiconductor laser in which an InGaAsP active layer serving as light emitting layer and formed in the shape of a stripe on the surface of a flat InP first clad layer, and an InP second clad layer that is wider than the InGaAsP active layer and formed on the InGaAsP active layer are buried in an InP burying layer. The stripe direction is the <011> direction, an etched mirror is formed in the vicinity of the end of the active layer, and an opto-electronic integrated circuit is formed by integrating the electric device and photo detecting device on the same substrate. The substrate is a semi-insulating substrate, and the electric device and photo detecting device are formed on the InGaAsp or InGaAs layer formed on the InP burying layer by crystal growth.

REFERENCES:
patent: 4470143 (1984-09-01), Kitamura et al.
"Electrical Derivative Characteristics of InGaAsP Buried Heterostructure Lasers", P. D. Wright et al., J. Appl. Phys. 53(3), Mar. 1982, pp. 1364-1372.

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