Method for depositing continuous pinhole free silicon nitride fi

Details Method for depositing continuous pinhole free silicon nitride fi Method for depositing continuous pinhole free silicon nitride fi

1976-08-30

1978-05-16

Weiffenbach, Cameron K.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427248A, 357 52, 357 54, 357 73, B05D 512

Patent

active

040899926

ABSTRACT:
A substrate article coated with a pinhole free film of silicon nitride produced by reacting silane with a nitrogen containing compound which upon decomposition produces nascent nitrogen and sufficient amounts of a carrier gas that is inert to the reactants and heating said substrate to a temperature above about 500.degree. C to cause the deposition of silicon nitride film on said substrate.

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