MESFET Using a shallow junction gate structure on GaInAs

Details MESFET Using a shallow junction gate structure on GaInAs MESFET Using a shallow junction gate structure on GaInAs

1981-12-04

1984-09-11

Larkins, William D.

357 15, 357 16, H01L 2980, H01L 2956

Patent

active

044713673

ABSTRACT:
A thin and highly doped Ga.sub.0.47 In.sub.0.53 As layer disposed on a Ga.sub.0.47 In.sub.0.53 As layer increases the barrier height and produces useful device characteristics. For example, the structure may be used as the gate electrode in an InGaAs field effect transistor.

REFERENCES:
patent: 3943552 (1976-03-01), Shannon et al.
patent: 4075651 (1978-02-01), James
patent: 4350993 (1982-09-01), Wieder
patent: 4424525 (1984-01-01), Mimura
Hasegawa et al., "Microwave Field Effect Transistors" IEEE Int. Solid State Circuits Conf., San Francisco, pp. 118-119, Feb. 1978.
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