Voltage detection circuit

Electricity: power supply or regulation systems – External or operator controlled – Using a three or more terminal semiconductive device as the...

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323284, 307358, 307362, G05F 1565

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active

048250180

ABSTRACT:
In a voltage detection circuit, at least a portion of the gate insulation film of a voltage detecting transistor is formed thicker than the other portion of the gate insulation film. Such voltage detecting transistor can be fabricated on a semiconductor substrate in the same process as conventional MOS transistors, so that the extra mask or process is not required. And since the amount of trapped electron does not change due to the passing of time, aging effects for detection precision is small.

REFERENCES:
patent: 4663584 (1987-05-01), Okada et al.
patent: 4706011 (1987-11-01), Vergara et al.
patent: 4713600 (1987-12-01), Tsugaru et al.

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