Method for obtaining regions of dielectrically isolated single c

Details Method for obtaining regions of dielectrically isolated single c Method for obtaining regions of dielectrically isolated single c

1987-02-05

1989-04-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG29, 148DIG116, 156614, 156628, 156657, 357 49, 437 36, 437 90, 437 99, 437239, 437981, 437985, H01L 2176, H01L 2126

Patent

active

048247952

ABSTRACT:
A method of forming single crystal islands (30) by epitaxial growth from a monocrystalline substrate (10). A <100> or other suitable low index surface is preferentially etched to void an inverted pyramid section (16) with <111> or other suitable low index sidewalls (18). The <100> bottom (17) of the pyramid section is covered with insulation (20) and island refill material (24) is grown epitaxially from the sidewalls (18). The islands (30) are laterally isolated (25, 28) from the sidewalls (13) and the structure is finished to provide a substrate on which to form various IC devices.

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