Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means
Patent
1978-10-13
1981-09-08
Salce, Patrick R.
Electricity: electrical systems and devices
Safety and protection of systems and devices
Load shunting by fault responsive means
361 91, 357 50, 357 47, H02H 320
Patent
active
042888298
ABSTRACT:
A MOS integrated circuit comprises a MOS IC body including at least one MOS transistor made of an island-like semiconductor layer formed on an insulating substrate, and a protective circuit connected between a signal input terminal and the gate electrode of a MOS transistor at least at an input stage of the MOS IC body and adapted to protect the MOS integrated circuit against an irregular input signal. The protective circuit is also connected between ground and the gate electrode of the MOS transistor at the input stage of the MOS IC body and comprises a protective MOS transistor made of an island-like semiconductor layer formed on the insulating substrate in a manner to be arranged in juxtaposition with the MOS transistor at the input stage of the MOS IC body, a resistor connected between the signal input terminal and the gate circuit of the MOS transistor as the input stage of the MOS IC body the resistor being formed on a grounded insulating layer on the semiconductor layer overlying the insulating substrate to provide a stray capacitance therebetween, the resistor being formed in juxtapositon with the protective MOS transistor.
REFERENCES:
patent: 3403270 (1968-09-01), Pace et al.
patent: 3636418 (1972-01-01), Burns
patent: 3712995 (1973-01-01), Steudel
patent: 3728591 (1973-04-01), Sunshine
patent: 3967295 (1976-06-01), Stewart
patent: 4042948 (1977-08-01), Kilby
patent: 4092735 (1978-05-01), McElroy
Agency of Industrial Science and Technology
Salce Patrick R.
LandOfFree
Protective circuit on insulating substrate for protecting MOS in does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Protective circuit on insulating substrate for protecting MOS in, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Protective circuit on insulating substrate for protecting MOS in will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1195551