HVMOSFET Driver with single-poly gate structure

Details HVMOSFET Driver with single-poly gate structure HVMOSFET Driver with single-poly gate structure

1979-08-17

1981-09-08

Wojciechowicz, Edward J.

357 23, 357 24, 357 45, 357 50, 357 51, 357 52, 357 53, 357 55, 357 56, 357 68, 357 91, H01L 2702

Patent

active

042888026

ABSTRACT:
Integrated monolithic arrays of high voltage metal oxide semiconductor field effect transistors having closed geometry grounded peripheries for inter-device isolation are able to function as drivers that may be switched on and off. The HVMOSFET'S includes DMOS-like structures with separate channel and drift regions, closed geometry configurations with center drains, and split oxide topography having relatively thin oxide under a control gate and over a channel region, and relatively thick oxide under a field plate and over a drift region for surface depletion and high voltage field inversion preclusion respectfully. The infra described HVMOSFET with single polysilicon layers for non-overlapping gates is operative to bend field lines away from the drain oven thereby increasing the available breakdown voltage adjacent to the drain area.

REFERENCES:
patent: 3909320 (1975-09-01), Cauge et al.
patent: 4017883 (1977-04-01), Ho et al.

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