Ion beam conical scanning system

Details Ion beam conical scanning system Ion beam conical scanning system

1994-02-18

1994-12-13

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37317

Patent

active

053731646

ABSTRACT:
An ion implantation system including structure to create a dipole field through which the beam passes. The strength and direction of the dipole field is controlled to adjust an angle of impact between the workpiece, typically a semi-conductor wafer and the ion beam. A side-to-side scanning motion is used to provide controlled doping of an entire semiconductor wafer.

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patent: 4276477 (1981-06-01), Enge
patent: 4661712 (1987-04-01), Mobley
patent: 4687936 (1987-08-01), McIntyre et al.
patent: 4794305 (1988-12-01), Matsukawa
patent: 4922106 (1990-05-01), Berrian et al.
patent: 4942342 (1990-07-01), Tsukakoshi
patent: 5091655 (1992-02-01), Dykstra et al.
patent: 5099130 (1992-03-01), Aitken
New Generation Ion Implanter for Sub-Micron Era, Ulvac Corporation.
European Search Report dated Nov. 3, 1993 for the European Counterpart (Appln No. 93304975.1).

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