HEMT device with doped active layer

Details HEMT device with doped active layer HEMT device with doped active layer

1991-02-25

1992-10-06

Jackson, Jr., Jerome

357 16, 357 4, H01L 29205, H01L 2980

Patent

active

051536820

ABSTRACT:
A high-mobility semiconductor device having GaAs/AlGaAs hetero junction of the present invention comprises a GaAs active layer and a GaAs contact layer, with a high-carrier concentration AlGaAs barrier layer interposed therebetween, so that the effective carrier concentration of the active layer can be increased and thus the thickness thereof can be reduced, resulting in an increase in the trans-conductance and improvement in the high frequency characteristics. Since the presence of the AlGaAs barrier layer enables selecting etching, such element characteristics as the plane uniformity and reproducibility can be improved.

REFERENCES:
patent: 4663643 (1987-05-01), Mimura
patent: 4755857 (1988-07-01), Abstreiter et al.
patent: 4987462 (1991-01-01), Kim et al.
IEEE Electron Device Letters, vol. EDL-8, No. 12, Dec. 1987 Hida et al, "High-Speed . . . (DMT's)" pp. 557-559.
"Advanced Processing of Semiconductor Devices" Proceedings of SPIE-The International Society for Optical Engineering, Inoue et al 25 Mar. 23-24, 1987 vol. 797.

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