Method for epitaxially growing a II-VI compound semiconductor

Details Method for epitaxially growing a II-VI compound semiconductor Method for epitaxially growing a II-VI compound semiconductor

1993-06-23

1994-12-13

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437105, 437133, 148DIG64, H01L 2120

Patent

active

053729706

ABSTRACT:
A method for epitaxially growing a II-VI compound semiconductor according to this invention comprises the steps of epitaxially growing a GaAs.sub.x Se.sub.1-x layer on a GaAs substrate and epitaxially growing a ZnSe layer or a compound semiconductor layer including ZnSe on the GaAs.sub.x Se.sub.1-x layer. This method provides a II-VI compound semiconductor in which a strain caused by a lattice mismatch is prevented and the hetero interface is excellent.

REFERENCES:
patent: 5213998 (1993-05-01), Qiu et al.
M. Sauvage-Simkin et al., Physical Review Letters, vol. 62, No. 5, "Fractional Stoichiometry of the GaAs(001)c (4.times.4) Surface: An In-Situ X-Ray Scattering Study", Jan. 30, 1989, pp. 563-566.
M. A. Haase et al. "Blue Green diodes", Appl. Phys. Lett. 59(11), 9 Sep. 1991, pp. 1272-1274.
Y. Horikoshi et al. "Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Beam Epitaxy", Japanese Journal of Applied Physics, vol. 25, No. 10, Oct. 1986, pp. L868-L870.
Kobayashi in "Zinc selenide/Gallium arsenide heterointerface . . . ", Jpn. Jn. Appl. Phys. part 2,27(9), 1988, L1597-L1599.
Moriizumi et al. in "Epitaxial Vapor growth of ZnTe on InAs" in Jpn. J. Appl. Phys. vol. 9, 1970, pp. 849-850.

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