Method of producing pillar-shaped DRAM and ROM devices

Details Method of producing pillar-shaped DRAM and ROM devices Method of producing pillar-shaped DRAM and ROM devices

1993-06-04

1994-12-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 48, 437 59, H01L 2170, H01L 2700

Patent

active

053729641

ABSTRACT:
A semiconductor device comprises: a semiconductor substrate, a semiconductor pillar projected from the semiconductor substrate, an insulating layer formed on the circumferential surface of the semiconductor pillar, a conductive side wall formed on the circumferential surface of the semiconductor pillar through the insulating layer, an insulating layer obtained by insulating a part of the conductive side wall in such a manner that the upper portion thereof are more insulated than other portion, an insulating layer formed on the substrate so that the surface of the insulating layer surrounds the conductive side wall and is continuously and flatly arranged at the head portion surface of the semiconductor pillar, and a conductive pattern an electrical contact with to the head portion surface of the semiconductor pillar electrically insulated from the conductive side wall.

REFERENCES:
patent: 4541166 (1985-09-01), Yamazaki
patent: 4737831 (1988-04-01), Iwai
patent: 4769786 (1988-09-01), Garnache et al.
patent: 4849369 (1989-07-01), Jeuch et al.
patent: 4937641 (1990-06-01), Sunami et al.
patent: 4947225 (1990-08-01), Custode

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