Method for manufacturing a semiconductor memory device capable o

Details Method for manufacturing a semiconductor memory device capable o Method for manufacturing a semiconductor memory device capable o

1993-03-25

1994-12-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 50, 437 43, H01L 21265

Patent

active

053729633

ABSTRACT:
A method for manufacturing a semiconductor memory device according to the present invention, comprises the steps of forming a plurality of striped element separating regions in a surface region of a semiconductor substrate to obtain a plurality of striped element forming regions on the semiconductor substrate, forming at least first, second, and third word lines so as to cross the element forming regions at right angles, delimiting a drain forming region formed between the first and second word lines and surrounded by the element separating regions, and delimiting a source forming region between the second and third word lines, forming a first cover on a region between the first and second word lines, removing the element separating regions from the source forming region, using the first cover and the first, second and third word lines as masks, forming a second cover at least on the source forming region, and introducing impurities whose conductivity type is equal to a conductivity type of the semiconductor substrate, into the semiconductor substrate, using the second cover as a mask.

REFERENCES:
patent: 4500899 (1985-02-01), Shirai et al.
patent: 4994407 (1991-02-01), Custode et al.
patent: 5004701 (1991-04-01), Motokawa
Yoichi Ohshima et al., IEDM Technical Digest, Dec. 9, 1990, pp. 95-98, "Process and Device Technologies for 16Mbit EPROM with Large-Tilt-Angle Implanted P-Pocket Cell".

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