Method of fabricating an insulated gate bipolar transistor

Details Method of fabricating an insulated gate bipolar transistor Method of fabricating an insulated gate bipolar transistor

1993-11-08

1994-12-13

Thomas, Tom

Fishing, trapping, and vermin destroying

437 6, 437 50, 437 44, 437974, 148DIG135, H01L 21265

Patent

active

053729544

ABSTRACT:
There is disclosed an IGBT which includes an n.sup.+ layer (2A), an n.sup.- layer (2B), a p well region (3), an n.sup.+ diffusion region (4), a gate oxide film (5), a gate electrode (6) and an emitter electrode (8) around the upper major surface of a p.sup.+ substrate (1), similarly to conventional IGBTs. In the lower major surface of the p.sup.+ substrate (1) is formed an n.sup.+ diffusion region (10) which adapted not to reach the n.sup.+ layer (2A). The n.sup.+ diffusion region (10) and p.sup.+ substrate (1) are connected to a collector electrode (9). When there is a small potential difference between the emitter and collector electrodes, holes are injected from the p.sup.+ substrate into the n.sup.- layer to provide a low ON-resistance. When the potential difference is large, a depletion layer extending from the n.sup.+ diffusion region is brought into a reach-through state to limit an increase in the amount of injected holes. This prevents the device from being broken down due to an excessively increased current density.

REFERENCES:
patent: 5023191 (1991-06-01), Sakurai
patent: 5034336 (1991-07-01), Seki
patent: 5084401 (1992-01-01), Hagino
patent: 5141889 (1992-08-01), Terry et al.
patent: 5171696 (1992-12-01), Hagino
patent: 5178370 (1993-01-01), Clark et al.
patent: 5264378 (1993-11-01), Sakurai

Affiliated with

Also associated with

Rating

Method of fabricating an insulated gate bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating an insulated gate bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating an insulated gate bipolar transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1193109