Method of making a semiconductor having selectively enhanced fie

Details Method of making a semiconductor having selectively enhanced fie Method of making a semiconductor having selectively enhanced fie

1993-10-01

1994-12-13

Hearn, Brian

Fishing, trapping, and vermin destroying

437 70, 437979, H01L 21266

Patent

active

053729510

ABSTRACT:
A field oxide is provided which purposefully takes advantage of fluorine mobility from an implanted impurity species. The field oxide can be enhanced or thickened according to the size (area and thickness) of the oxide. Fluorine from the impurity species provides for dislodgement of oxygen at silicon-oxygen bond sites, leading to oxygen recombination at the field oxide/substrate interface. Thickening of the oxide through recombination occurs after it is initially grown and implanted. Accordingly, initial thermal oxidation can be shortened to enhance throughput. The fluorine-enhanced thickening effect can therefore compensate for the shorter thermal oxidation time. Moreover, the thickened oxide regions are anistropically oxidized underneath existing thermally grown oxides and directly underneath openings between nitrides. The thickened oxides therefore do not cause additional shrinkage of the active areas which reside between field oxides.

REFERENCES:
patent: 4352236 (1982-10-01), McCollum
patent: 4743563 (1988-05-01), Pfiester et al.
patent: 4971923 (1990-11-01), Nakanishi
Wright et al, "The Effect of Fluorine in Silicon Dioxide Gate Dielectrics", IEEE Trans. on Elec. Devices, vol. 36, No. 5 May (1989), pp. 879-889.
Sung et al., "A Comprehensive Study on p+ Polysilicon-Gate MOSFET's Instability with Fluorine Incorporation", IEEE Trans. on Elec. Devices, vol. 37, No. 11, Nov. 1990, pp. 2312-2320.
Hsieh et al., "Characteristics of MOS Capacitors of BF.sub.2 or Implanted Polysilicon Gate with and without POCI.sub.3 Co-doped", IEEE Electron Device Letters, vol. 14, No. 5, May 1993, pp. 222-224.

Affiliated with

Also associated with

Rating

Method of making a semiconductor having selectively enhanced fie does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor having selectively enhanced fie, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor having selectively enhanced fie will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1193074