Protective tab structure for use in the fabrication of matrix ad

Details Protective tab structure for use in the fabrication of matrix ad Protective tab structure for use in the fabrication of matrix ad

1987-10-05

1988-10-18

Miller, Stanley D.

Fishing, trapping, and vermin destroying

350333, 350334, 437180, 437189, 437192, 357 234, 357 237, G02F 113

Patent

active

047782587

ABSTRACT:
A process for the fabrication of thin film field effect transistors in active matrix liquid crystal display devices includes the utilization of a protective, conductive tab disposed on a corner portion of the pixel electrodes. Electrical contact is made to the pixel electrodes not directly, but rather through a via opening in protective, insulative and amorphous silicon layers. The structure is particularly advantageous in that it permits the utilization of a wider range of gate and upper level metallization materials, particularly aluminum, whose etchants are otherwise found deleterious to pixel electrode material such as indium tin oxide. The structure of the present invention is seen to be readily fabricatable in accordance with high yield fabrication procedures.

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