Method of making tunnel EEPROM

Fishing – trapping – and vermin destroying

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437 44, 437 48, 437 52, 437228, H01L 2170

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051531445

ABSTRACT:
An EEPROM (Electrically Erasable Programmable Read Only Memory) has a structure in which the corners of a floating gate electrode of each memory cell MISFET near the source region thereof are rounded.
The EEPROM is manufactured by a method characterized in that the ions of an impurity at a high dose are implanted in self-alignment with the floating gate electrode and control gate electrode of the memory cell MISFET so as to form the source and drain regions thereof, whereupon an oxidizing treatment is carried out.

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