1987-03-19
1990-09-11
James, Andrew J.
357 43, 357 91, H01L 29167
Patent
active
049566938
ABSTRACT:
Disclosed is a semiconductor device having a support region, an element-forming region (e.g., an epitaxial layer) and a buried layer between the support region and the element-forming region, with at least one of a MOS element and a bipolar element being formed in the element-forming region. The feature of the present invention resides in that atoms of at least one element selected from oxygen, nitrogen, carbon, argon, neon, krypton and helium is contained in a layer in at least one of the element-forming region and the buried layer, so as to suppress auto-doping of impurities from the buried layer into the element-forming region and suppress swelling of the buried layer.
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Momma Naohiro
Saito Ryuichi
Sawahata Yasuo
Hitachi , Ltd.
James Andrew J.
Prenty Mark
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