Zero crossing type thyristor

Details Zero crossing type thyristor Zero crossing type thyristor

1990-01-26

1990-09-11

Hille, Rolf

357 20, 357 39, 357 85, H01L 2974, H01L 2906, H01L 29747, H01L 4900

Patent

active

049566903

ABSTRACT:
A zero-crossing type thyristor is formed in an N-type semiconductor substrate. A first P-type base layer, a second P-type base layer, and a first P-type emitter layer are formed in a main surface of the substrate and isolated from one another by semiconductor regions of the substrate. A second N-type emitter layer is formed in the first P-type base layer, and a third N-type emitter layer is formed in the second P-type base layer. The third N-type emitter layer is electrically connected to the first P-type base layer. A fourth P-type emitter layer is formed in an opposite surface of the substrate. The second N-type emitter layer, first P-tytpe base layer, N-type semiconductor region, and fourth P-type emitter layer constitute a vertical main thyristor of the zero-crossing type thyristor, and the third N-type emitter layer, second P-type base layer, N-type semiconductor region, and first P-type emitter layer constitute a lateral driving thyristor thereof.

REFERENCES:
patent: 3508127 (1970-04-01), Bergman et al.
patent: 4050083 (1977-09-01), Jaskolski et al.
patent: 4529998 (1985-07-01), Lade et al.

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