Semiconductor laser with reduced absorption at a mirror facet

Details Semiconductor laser with reduced absorption at a mirror facet Semiconductor laser with reduced absorption at a mirror facet

1982-10-29

1985-06-11

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 48, H01S 319

Patent

active

045233179

ABSTRACT:
A semiconductor laser having an active layer which has a non-zero thickness in a region adjacent to at least one of the mirror facets which is less than that of the remainder of the active layer in the longitudinal direction. In the region adjacent to the mirror facet the laser light propagates primarily in a non-absorbing guide layer adjacent to the active layer thus, reducing optical absorption and heat generation at the mirror facet.

REFERENCES:
patent: 3753801 (1973-08-01), Lockwood et al.
patent: 3978426 (1976-08-01), Logan et al.
patent: 3993963 (1976-11-01), Logan et al.
patent: 4178564 (1979-12-01), Ladany et al.
patent: 4215319 (1980-07-01), Botez
patent: 4347486 (1982-08-01), Botez
patent: 4371966 (1983-02-01), Scifres et al.
N. Ueno, "Optimum Design Conditions for AlGaAs Window Stripe Lasers", IEEE Journal of Quantum Electronics, QE17, 2113, (1981).

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