Semiconductor laser with non-absorbing mirror facet

Details Semiconductor laser with non-absorbing mirror facet Semiconductor laser with non-absorbing mirror facet

1982-10-29

1985-06-11

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 48, H01S 319

Patent

active

045233160

ABSTRACT:
A constricted heterostructure laser in which the active layer does not extend to an emitting facet. The light from the active layer is coupled into an underlying guide layer which provides lateral guidance of the laser beam to the emitting facet. The shape of the output laser beam in both the lateral and transverse directions may be varied by varying the shape of the guide layer in that portion of the laser where the active layer does not overlie the guide layer.

REFERENCES:
patent: 3701047 (1972-10-01), Caplan et al.
patent: 3753801 (1973-08-01), Lockwood et al.
patent: 3978426 (1976-08-01), Logan et al.
patent: 3993963 (1976-11-01), Logan et al.
patent: 4092659 (1978-05-01), Ettenberg
patent: 4178564 (1979-12-01), Ladany et al.
patent: 4215319 (1980-07-01), Botez
patent: 4297652 (1981-10-01), Hayashi et al.
patent: 4347486 (1982-08-01), Botez
patent: 4383320 (1983-05-01), Botez et al.
Ueno, "Optimum Design Conditions for AlGaAs Window Stripe Lasers" IEEE Journal of Quantum Electronics QE17, 2113 (1981).
Botez "InGaAsP/InP Double Heterostructure Lasers" IEEE Journal of Quantum Electronics, QE17, 178 (1981).
Botez, et al., "Single-Mode Positive-Index Guided cw Constricted Double-Heterojunction Large-Optical-Cavity AlGaAs Lasers with Low Threshold-Current Temperature Sensitivity", Appl. Phys. Lett. 38(9), May 1981, pp. 658-660.
Botez, "cw High-Power Single-Mode Operation of Constricted Double-Heterojunction AlGaAs Lasers with a Large Optical Cavity", Appl. Phys. Lett. 36(3), Feb. 1980, pp. 190-192.

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