Released film structures and method of measuring film properties

Measuring and testing – Specimen stress or strain – or testing by stress or strain... – Deformation or change in stress after fracture – cutting – or...

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G01N 1906

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048236071

ABSTRACT:
Released film structures are employed in measuring the mechanical properties of the film material. By measuring the deformation of thin film structures held under intrinsic tensile stress and then released, these mechanical properties can be accurately measured.

REFERENCES:
patent: 3994598 (1976-11-01), Reytblatt
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Measurement of Stress Generaged During Curing and in Cured Polyimide Films, Geldermans, et al., IBM East Fishkill General Technology Division, Hopewell Junction, NY 12533, 1982.
A Technique for the Determination of Stress in Thin Films, Bromley et al, J. Vac. Sci. Technol. B, vol. 1, No. 4, Oct.-Dec. 1983.
Stress in Polycrystalline and Amorhous Silicon Thin Films, Howe and Muller, J. Appl. Phys. 54(8), Aug. 1983.
A Simple Technique for the Determination of Mechanical Strain in Thin Films with Applications to Polysilicon, Guckel, Randazzo, & Burns, J. Appl. Phys: 57(5), Mar. 1, 1985.
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"Structure and Properties of Thin Films," Beams, J. W., from Proceedings of an International Conference held on 9/11/59, John Wiley & Sons, Inc., ed. by Neugelbauer, Newkirk and Vermilyea.
"Local Stress Measurement in Thin Thermal SiO.sub.2 Films on Si Substrates", Lin, et al., J. Appl. Phys., vol. 43, No. 1, Jan. 1972.
"Deposition Techniques and Properties of Strain Compensated LPCVD Silicon Nitride Films," H. Guckel, D. K. Showers, D. W. Burns, C. R. Rutigliano, Wisconsin Ctr. for Applied Microelectronics, Dept. of Electrical & Computer Engineering, Univ. of Wisc.
"Novel Microstructures for the Study of Residual Stress in Polyimide Films," M. Mehregany, R. T. Howe, and S. D. Senturia in the Proceedings of the Electronic Materials Conference, Amherst, MA, 6/86, pp. 179-180.
"Novel Microstructures for the Study of Residual Stress in Polyimide Films," Mehregany, Howe, Senturia, in the Proceedings of the MIT VLSI Research Review, Cambridge, MA, May 19, 1986.

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