Semiconductor pressure sensor with casing and method for its man

Measuring and testing – Fluid pressure gauge – Diaphragm

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296211, 73706, 338 4, G01L 708, G01L 906

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active

048236055

ABSTRACT:
A semiconductor pressure sensor and method for its manufacture. Preferably, the pressure sensor is used as an absolute pressure sensor. The pressure sensor includes a pressure sensor chip of semiconductor material, the pressure sensor chip including a piezoresistive diaphragm. The pressure sensor is arranged in a casing which has an aperture for transmitting the ambient pressure to the diaphragm of the pressure sensor chip. The pressure sensor chip is fastened on a conductive tape and the conductive tape is a component of the casing. The casing consists of a hard synthetic material and contains the pressure sensor chip. The casing is configured so that the method of manufacture and tooling for manufacture allow cost-efficient production. The casing also offers protection for the pressure sensor during testing, equipping and during application in a circuit. The pressure sensor also includes a soft elastic material for covering the pressure sensor chip and transmitting ambient pressure from the aperature to the diaphragm.

REFERENCES:
patent: 4274423 (1981-06-01), Mizuno et al.
patent: 4322980 (1982-04-01), Suzuki et al.
patent: 4658651 (1987-04-01), Le
patent: 4732042 (1988-03-01), Adams
"Une Nouvelle Technologie Pour Les Capteurs de Pression"; No. 474, May 1982; by J. P. Delaporte; pp. 23-25.
"An Update On The Integration of Silicon Pressure Sensors"; Nov. 19-22, 1985; by Randall K. Frank and Wendell E. McCulley; pp. 1-5.
"Silizium-Drucksensoren Fuer den Bereich 2kPa bis 40 MPa"; 1985, by Josef Binder, Klaus Becker and Guenter Ehrler; pp. 64-67.
Silizium-Relativdrucksensoren fuer den Nierderdruckbereich bis 50 kPa (500 mbar), 1984; pp. 285 and 286.

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