Methods of manufacturing semiconductor devices

Details Methods of manufacturing semiconductor devices Methods of manufacturing semiconductor devices

1978-11-24

1981-09-08

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29590, 29591, 148187, 357 23, H01L 21223

Patent

active

042876605

ABSTRACT:
A method of manufacturing a semiconductor device is set forth in which a masking layer is formed on part of the surface of a deposited layer of a relatively high resistivity polycrystalline semiconductor material being present on an insulating layer provided at a surface of a semiconductor body or portion thereof. A relatively low resistivity conductive region having a substantially uniform narrow line width is defined in the polycrystalline layer by effecting a diffusion process to laterally diffuse a doping element into a portion of the polycrystalline layer underlying an edge portion of the masking layer without diffusing the doping element through the insulating layer into the semiconductor body or portion thereof.

REFERENCES:
patent: 3411051 (1968-11-01), Kilby
patent: 3576478 (1971-04-01), Watkins
patent: 3623923 (1971-11-01), Kennedy

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