Semiconductor device

Details Semiconductor device Semiconductor device

1981-01-21

1985-06-11

James, Andrew J.

357 34, 357 46, 357 48, 357 89, 357 90, H01L 2702, H01L 2704, H01L 2972

Patent

active

045232156

ABSTRACT:
A semiconductor device including a power transistor and a power semiconductor diode disposed on a common semiconductor substrate is arranged such that the power diode has a withstanding voltage and a dielectric strength which are greater than that of the power transistor. The increased withstanding voltage and dielectric strength of the power semiconductor diode are effected without deteriorating the characteristics of the power transistor.

REFERENCES:
patent: 3335341 (1967-08-01), Lin
patent: 3547716 (1970-12-01), De Witt et al.
patent: 3595713 (1971-07-01), DeBrebisson et al.
patent: 3868722 (1975-02-01), Le Can et al.
patent: 4228448 (1980-10-01), Lalumia et al.

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