MIS Field effect transistor for high source-drain voltages

Details MIS Field effect transistor for high source-drain voltages MIS Field effect transistor for high source-drain voltages

1978-01-30

1981-01-27

Clawson, Jr., Joseph E.

357 20, 357 55, 357 91, H01L 2978

Patent

active

042478600

ABSTRACT:
A MIS field effect transistor of the depletion type having source, drain and channel regions of a first conductivity type formed in a substrate of the second conductivity type. A gate electrode is formed on an insulating layer above the channel. The spacing between the channel and the gate electrode increases between the source and the drain. This increase in spacing may be a continuous increase in the direction of the drain or may be a series of steps. A circuit arrangement is described where a plurality of these depletion MIS field effect transistors of the above type are serially connected with the source of the first of these depletion type transistors, connected to the drain of a preceding enhancement type MIS field effect transistor.

REFERENCES:
patent: 3339128 (1967-08-01), Olmstead et al.
patent: 3436620 (1969-04-01), Diemer et al.
patent: 3604990 (1971-09-01), Sigsbee
patent: 4029522 (1977-06-01), Delamoneda
patent: 4062037 (1977-12-01), Togei et al.
patent: 4063267 (1977-12-01), Hsia
patent: 4069430 (1978-01-01), Masuda
patent: 4112455 (1978-09-01), Seliger et al.
patent: 4115794 (1978-09-01), Delamoneda
patent: 4132998 (1979-01-01), Dingwall
patent: 4143388 (1979-03-01), Esaki et al.
"MOSFET Power Soars to 60 W With Currents up to 2A," Electronic Design, vol. 21 #3, Oct. 11, 1975, pp. 103-104.

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