Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1995-09-05

1996-12-24

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

055880169

ABSTRACT:
A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

REFERENCES:
patent: 5253265 (1993-10-01), Seko et al.
patent: 5275969 (1994-01-01), Takahashi
Appl. Phys. No. 9, vol. 58, (1989), p. 1360-1367 (no month).
Dallesasse, et al., "Impurity-induced layer disordering in In.sub.0.5 (Al.sub.x Ga.sub.1-x) 0.5 P-InGaP quantum-well heterostructures: Visible-spectrum-buried heterostructure lasers," Jul. 15, 1989, J. Appl. Phys. vol. 66, pp. 482-487.
Meehan, et al., "Zn disordering of a Ga.sub.0.5 In.sub.0.5 P-(Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P quantum well heterostructure grown by metalorganic chemical vapor deposition," Appl. Phys. Letter, vol. 54, May 22, 1989, pp. 2136-2138.

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