Semiconductor device with a gray tin layer and a method of makin

Details Semiconductor device with a gray tin layer and a method of makin Semiconductor device with a gray tin layer and a method of makin

1981-09-18

1984-04-24

Edlow, Martin H.

357 17, 357 61, 357 4, H01L 29161

Patent

active

044451296

ABSTRACT:
Epitaxial thin layers of .alpha.-tin are grown by vapor phase epitaxy upon lattice-matched substrates of InSb or CdTe by the thermal decomposition of stannane. By using substrates of smaller lattice constant it is possible to modify the process to deposit .alpha.-tin germanium alloys.

REFERENCES:
patent: 3615856 (1971-10-01), Sommers, Jr.
patent: 3871017 (1975-03-01), Pratt, Jr.

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