Microplanarization of rough electrodes by thin amorphous layers

Details Microplanarization of rough electrodes by thin amorphous layers Microplanarization of rough electrodes by thin amorphous layers

1995-06-07

1996-12-24

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257311, 148 33, 437 60, H01L 2702, H01L 2700

Patent

active

055876145

ABSTRACT:
A method of improving the dielectric properties of a thin dielectric disposed on a polycrystalline material, a method of forming a capacitor therewith and the capacitor. An electrode (17) having a polycrystalline material surface having voids (23) extending to the surface, preferably silicon, is provided. A layer of an amorphous form of the material (19) having a thickness of from about 20 .ANG. to about 500 .ANG. is formed over the surface with the amorphous layer disposed within the voids. A thin layer of a dielectric (21) is formed over the amorphous layer and, in the fabrication of a capacitor, a layer of electrical conductor (25) is provided which is spaced from the material over the dielectric. A microcontaminant can be disposed between the polycrystalline material surface and the amorphous layer.

REFERENCES:
patent: 4737474 (1988-12-01), Price et al.
patent: 4931897 (1990-06-01), Tsukamoto et al.
patent: 5376576 (1994-12-01), Moon et al.
patent: 5411912 (1995-05-01), Sakamoto

Affiliated with

Also associated with

Rating

Microplanarization of rough electrodes by thin amorphous layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microplanarization of rough electrodes by thin amorphous layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microplanarization of rough electrodes by thin amorphous layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1180561