Semiconductor device having semiconductor active and dummy regio

Details Semiconductor device having semiconductor active and dummy regio Semiconductor device having semiconductor active and dummy regio

1995-09-11

1996-12-24

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257521, 257347, 257354, H01L 2900, H01L 2701

Patent

active

055876129

ABSTRACT:
Disclosed is a semiconductor device in which dummy regions which are lower than an isolated element region are formed around the isolated element region. Another dummy region which has a height nearly equal to those of element regions may be formed at a non-element-region-existing region, accompanying with lower dummy regions. The method for making the semiconductor device has the steps of suitably forming the element regions and dummy regions on a insulating layer on a substrate, depositing a insulator on the entire surface of the insulating layer and polishing the insulator to obtain a plane surface.

REFERENCES:
H. Nishizawa et al., "Fully SiO.sub.2 Isolated High Speed Self-Aligned Bipolar Transistor on Thin SOI", 1991 Symposium on VLSI Technology, Digest of Technical Papers, pp. 51 and 52 no date.

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