Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-09-12
1998-08-04
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 65, 257 69, 257 72, 257391, H01L 31036, H01L 2904
Patent
active
057897620
ABSTRACT:
It is intended to provide a semiconductor circuit including thin-film transistors (TFTs) having a small leak current and TFTs capable of operating at high speed, and a method for manufacturing such a circuit. A material containing a catalyst element is selectively formed so as to be in close contact with an amorphous silicon film, or a catalyst element is selectively introduced into an amorphous silicon film. The amorphous silicon film thus processed is crystallized by illumination with laser light or strong light equivalent to it. A crystalline silicon area with a small amount of catalyst element is used for TFTs in a pixel circuit and a crystalline silicon area with a large amount of catalyst element is used for TFTs in peripheral circuits of an active matrix circuit.
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G. Liu et al., "Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, low-temperature processing," Appl. Phys. Lett. 62(20), May 17, 1993, pp. 2554-2556.
G. Liu et al., "Selective area crystallization of amorphous silicon films by low-temperature rapid thermal annealing," Appl. Phys. Lett. 55(7), Aug. 14, 1989, pp. 660-662.
Hayakawa Masahiko
Koyama Jun
Miyanaga Akiharu
Ohtani Hisashi
Takemura Yasuhiko
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Wallace Valencia
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