Crosstie random access memory element having associated read/wri

Details Crosstie random access memory element having associated read/wri Crosstie random access memory element having associated read/wri

1990-11-19

1992-11-17

Popek, Joseph A.

Static information storage and retrieval

Magnetic shift registers

Thin film

G11C 1908

Patent

active

051650878

ABSTRACT:
A crosstie random access memory system for reading and/or writing, utilizing permalloy thin films patterned into "wiggle" shapes to form a plurality of memory cells in an array. Address lines for reading and/or writing into the memory cells are operative through associated circuitry for writing at selected locations in the array using coincident currents. Current passed through each column of memory cells effects magnetoresistance readout in conjunction with row address lines by means of the aforementioned associated circuitry which is arranged so as to be integrated on a single substrate with the memory array.

REFERENCES:
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Design Electronics, vol. 8, No. 4, Jan. 1971, A. Judeinstein et al, "Magnc thin-film memories", pp. 26-29.
L. J. Schwee et al., "The concept and initial studies of a crosstie random access memory (CRAM)," J. Appl. Phys. (vol. 53), No. 3, Mar. 1982, pp. 2762-2764.

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