Bed structure underlying electrode pad of semiconductor device a

Details Bed structure underlying electrode pad of semiconductor device a Bed structure underlying electrode pad of semiconductor device a

1997-05-27

2000-04-11

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

257786, 257622, H01L 2941

Patent

active

060491353

ABSTRACT:
A semiconductor device has: a substantially flat surface which is formed on a semiconductor substrate and has a predetermined pattern, in which an insulating layer is embedded; an interlayer insulator film formed on the surface, the interlayer insulator film having a protective layer for protecting the semiconductor substrate; and formed on the interlayer insulator film and adapted for bonding a wire thereto. In addition, a method for manufacturing a semiconductor device comprises the steps of: forming a semiconductor substrate having a surface which has a groove in which an insulating layer is embedded; forming a protective coat for protecting the surface of the semiconductor substrate, on the upper surface of the insulating layer embedded in the groove; and forming an electrode on the protective coat. According to the semiconductor device and the method for manufacturing the same, it is possible to more sufficiently planarize the surface of the insulating layer by the rotary polishing method, and it is possible to decrease the bonding damage applied to a underlayer portion serving as a bed of the semiconductor device when carrying out the wire bonding.

REFERENCES:
patent: 4509249 (1985-04-01), Goto et al.
patent: 4869781 (1989-09-01), Euen et al.
patent: 5703408 (1997-12-01), Ming-Tsung et al.

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