Semiconductor fabrication employing concurrent diffusion barrier

Details Semiconductor fabrication employing concurrent diffusion barrier Semiconductor fabrication employing concurrent diffusion barrier

1997-03-21

2000-04-11

Nelms, David

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

438303, 438305, M01L 21336

Patent

active

060491337

ABSTRACT:
An integrated circuit fabrication process is provided in which a metal salicide and a diffusion barrier are formed concurrently. This process includes doping regions of a silicon substrate which are spaced apart by a polysilicon gate conductor, thereby forming source/drain junctions within the substrate upper surface. Oxide spacers are located on opposite sidewall surfaces of the gate conductor. The resulting semiconductor topography is then placed within a chamber having a pressurized and heated nitrogen ambient. A metal, i.e., titanium is deposited upon the semiconductor topography, and then annealing of the metal occurs. The titanium metal reacts with silicon at interfaces not containing nitrogen atoms, i.e., exclusive of the oxide spacers, to form titanium salicide. Concurrent with this reaction is the formation of titanium nitride upon the titanium metal. Finally, aluminum is deposited upon the titanium nitride to complete metallization. The titanium nitride diffusion barrier prevents aluminum spiking of the doped junctions below.

REFERENCES:
patent: 4784973 (1988-11-01), Stevens et al.
patent: 4994410 (1991-02-01), Sun et al.
patent: 5043790 (1991-08-01), Butler
patent: 5242860 (1993-09-01), Nulman et al.
patent: 5360996 (1994-11-01), Nulman et al.
patent: 5401674 (1995-03-01), Anjum et al.
patent: 5610099 (1997-03-01), Stevens et al.

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