Solid state image sensor unit with wide dynamic range and high r

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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Details

257229, 257435, H01L 27148, H01L 29768, H01L 310232

Patent

active

060491000

ABSTRACT:
In a solid state image sensor unit which includes a substrate having a substrate surface and a plurality of first semiconductor regions formed on the substrate surface along a predetermined direction of the substrate surface with said first semiconductor regions substantially isolated electrically from each other. The solid state image sensor unit comprises a connection member formed on the substrate surface for supplying a reference potential to the first semiconductor regions in common.

REFERENCES:
patent: 5463232 (1995-10-01), Yamashita et al.
patent: 5619049 (1997-04-01), Kim
patent: 5736756 (1998-04-01), Wakayama et al.

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