Bipolar transistor having an emitter region formed of silicon ca

Details Bipolar transistor having an emitter region formed of silicon ca Bipolar transistor having an emitter region formed of silicon ca

1996-04-26

2000-04-11

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257 77, 257197, 257 19, H01L 2906, H01L 310312, H01L 310328

Patent

active

060490985

ABSTRACT:
A bipolar transistor comprises a collector region composed of an N type silicon, a base region composed of a P type silicon film in contact with the N type collector region and a P type SiC film in contact with at least one portion of P type silicon film, and an emitter region of an N type SiC film in contact with at least one portion of the P type SiC film.

REFERENCES:
patent: 5296391 (1994-03-01), Sato et al.
patent: 5323032 (1994-06-01), Sato et al.
patent: 5378921 (1995-01-01), Ueda
IEEE Transactions on Electron Devices, Aug. 1994, vol. 41, No. 8, pp. 1373-1378.
Sato et al; "A Super Self-Aligned Selectively Grown SiGe Base (SSSB) Bipolar Transistor Fabricated by Cold-Wall Type UHV/CVD Technology";Aug. 1994; pp. 1373-78; IEEE Transactions of Electron Devices, vol. 41, No. 8.

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