Method of forming a semiconductor device in a substrate depressi

Details Method of forming a semiconductor device in a substrate depressi Method of forming a semiconductor device in a substrate depressi

1995-04-19

1996-12-24

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 40, 437 29, 437913, H01L 2144, H01L 2148

Patent

active

055873405

ABSTRACT:
A field effect transistor is formed on a side surface of a rectangular parallelepiped depression formed in the upper surface of a single crystalline substrate. The orientation of the side surface is substantially selected in the (100) plane or an equivalent plane of the crystalline structure of the substrate. A sate electrode is formed on the side surface with a gate insulating film therebetween. Source and Drain regions are formed in the bottom of the depression and the surface of the substrate adjacent to the depression by ion implantation with the gate electrode as a mask.

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