Polysilicon contact stud process

Details Polysilicon contact stud process Polysilicon contact stud process

1995-04-27

1996-12-24

Fourson, George

Fishing, trapping, and vermin destroying

1566281, 437200, H01L 2144

Patent

active

055873383

ABSTRACT:
A process for creating a polysilicon contact stud, to connect overlying metallizations, to underlying active device regions in a semiconductor substrate, has been developed. After filling a contact hole with insitu doped polysilicon, and overlying with a titanium film, an anneal cycle is performed to convert the unwanted portions of polysilicon to titanium silicide. The silicide is then selectively removed, leaving polysilicon only in the contact hole, thus resulting in the desired stud configuration.

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