Method of forming a contact hole for a metal line in a semicondu

Details Method of forming a contact hole for a metal line in a semicondu Method of forming a contact hole for a metal line in a semicondu

1993-12-17

1996-12-24

Fourson, George

Fishing, trapping, and vermin destroying

437190, H01L 2144

Patent

active

055873316

ABSTRACT:
A method for forming a contact hole for a metal line in a semiconductor device, including the steps of forming a contact area on a semiconductor substrate to be connected to a metal line, forming a groove, of which side is insulated from a contact portion on a bottom and at a side of the groove, forming an insulating layer on a whole surface of the semiconductor substrate, and forming a contact hole by removing a portion of the insulating layer on the barrier metal contact portion.

REFERENCES:
patent: 4962414 (1990-10-01), Liou et al.
patent: 5030588 (1991-07-01), Hosaka
patent: 5094965 (1992-03-01), Ozaki et al.
patent: 5094981 (1992-03-01), Chung et al.
patent: 5240872 (1993-08-01), Motonami et al.
patent: 5246882 (1993-09-01), Hartmann
patent: 5246883 (1993-09-01), Lin et al.
patent: 5266156 (1993-11-01), Nasr
patent: 5275972 (1994-01-01), Ogawa et al.
patent: 5308783 (1994-05-01), Krautschneider et al.
patent: 5371041 (1994-12-01), Liou et al.
patent: 5397744 (1995-03-01), Sumi et al.

Affiliated with

Also associated with

Rating

Method of forming a contact hole for a metal line in a semicondu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a contact hole for a metal line in a semicondu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a contact hole for a metal line in a semicondu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1178359