Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1995-10-18

1996-12-24

Quach, T. N.

Fishing, trapping, and vermin destroying

437 21, 437174, 437247, 437 40, 148DIG90, 148DIG150, H01L 218234

Patent

active

055873308

ABSTRACT:
In producing a top gate type insulated gate semiconductor device in which a non-single crystalline semiconductor layer is used to form a channel forming region, after a gate electrode is formed on the non-single crystalline semiconductor layer through a gate insulating film, while ultraviolet light is irradiated to the non-single crystalline semiconductor layer, heating treatment is performed at a temperature of from 300.degree. to 600.degree. C. in an atmosphere containing nitrogen oxide or hydrogen nitride, in order to neutralize a recombination center in the non-single crystalline film or a boundary between the non-single crystalline film and the gate insulating film.

REFERENCES:
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5387546 (1995-02-01), Maeda et al.
patent: 5395804 (1995-03-01), Ueda
patent: 5403762 (1995-04-01), Takemura
patent: 5424230 (1995-06-01), Wakai
patent: 5523257 (1996-06-01), Yamazaki et al.

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1178353