Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1995-12-18

1996-12-24

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 41, 437 39, 437175, 437912, 148DIG100, H01L 21265

Patent

active

055873286

ABSTRACT:
A semiconductor device manufacturing method with which a GaAs MESFET and an integrated circuit using the same can be manufactured cheaply and with high yield by accurately forming a mushroom-shaped gate electrode with inexpensive equipment and a short process. The method includes the steps of: depositing a first mask layer on a semiconductor substrate; forming an opening in the first mask layer; causing the first mask layer to flow by heat-treating the semiconductor substrate; depositing a second mask layer on the first mask layer; forming in the second mask layer an opening larger than the opening in the first mask layer and exposing the opening in the first mask layer; and forming a gate electrode in the opening in the second mask layer.

REFERENCES:
patent: 4358891 (1982-11-01), Roesner
patent: 5037505 (1991-08-01), Tung
patent: 5185277 (1993-02-01), Tung et al.
patent: 5288660 (1994-02-01), Hua et al.
patent: 5486483 (1996-01-01), Lammert

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