Method of forming bipolar junction transistor of epitaxial plana

Details Method of forming bipolar junction transistor of epitaxial plana Method of forming bipolar junction transistor of epitaxial plana

1992-10-23

1996-12-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 33, 437162, 437191, 437193, 437909, 148DIG10, 148DIG11, 148DIG35, 148DIG124, 257565, 257586, H01L 21265

Patent

active

055873260

ABSTRACT:
In a bipolar junction transistor of an epitaxial planar type comprising a base region, an emitter region formed in the base region, and a poly-silicon layer as an emitter poly-silicon electrode layer overlying the emitter region, the poly-silicon layer being used as an impurity diffusion source for forming the emitter region in fabrication of the transistor, the emitter poly-silicon electrode layer comprises a poly-silicon film containing an additive of one of C, O, and P overlying the emitter region and a poly-silicon layer overlying the poly-silicon film. An impurity is doped in the poly-silicon layer and is diffused into the base region through the poly-silicon film to form the emitter region in the base region in fabrication of the transistor. The poly-silicon film contains the additive and serves to prevent the poly-silicon film and the poly-silicon layer from grain growth which badly affects the impurity diffusion for forming the emitter region.

REFERENCES:
patent: 4194934 (1980-03-01), Blaske et al.
patent: 4332837 (1982-06-01), Peyre-Lavigne
patent: 4358326 (1982-11-01), Doo
patent: 4433469 (1984-02-01), Goodman
patent: 4814291 (1989-03-01), Kim et al.
patent: 4975381 (1990-12-01), Taka et al.
patent: 5010026 (1991-04-01), Gomi
patent: 5116770 (1992-05-01), Kameyama et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5254485 (1993-10-01), Segawa et al.
patent: 5268313 (1993-12-01), Mass et al.

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