Coherent light generators – Particular active media – Semiconductor
Patent
1991-06-04
1992-11-17
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 46, 252200, 252616, H01S 317
Patent
active
051649500
ABSTRACT:
A semiconductor laser device which comprises a monocrystal substrate of consisting essentially of Si.sub.a Ge.sub.1-a, wherein 0.ltoreq.a.ltoreq.0.25, and a compound semiconductor layer which is formed on one side of the substrate and is lattice-matched with the substrate. The compound semiconductor layer includes an Al-free active layer made of Ga.sub.b In.sub.1-b P wherein 0.51<b.ltoreq.0.64 and the first and second clad layers sandwiching the active layer therebetween wherein said first clad layer is formed on the one side of the substrate. The first and second clad layer are each made of (Al.sub.o Ga.sub.1-o).sub.d In.sub.1-d P, wherein 0.4.ltoreq.c.ltoreq.1 and 0.51<d.ltoreq.0.64.
REFERENCES:
patent: 4897699 (1990-01-01), Razeghi et al.
"Strong Ordering in GaInP Alloy Semiconductors", by T. Suzuki et al.; Journal of Crystal Growth 93(1988), pp. 396-405.
Electronics Letters, vol. 25, No. 14, Jul. 6, 1989, Stevenage, Herts., GB, pp. 905-907; T. Tanaka.: `Lasing Wavelengths of Index-Guided AlGaInP Semiconductor Lasers as Functions of Off-Angle from (100) Plane of GaAs Sebstrate`.
Nakajima Masato
Yokotsuka Tatsuo
Epps Georgia Y.
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Semiconductor laser device comprising a SiGe single crystal subs does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor laser device comprising a SiGe single crystal subs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device comprising a SiGe single crystal subs will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1177459