Low-noise amplifier

Amplifiers – With semiconductor amplifying device – Including plural stages cascaded

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Details

330300, 330253, H03F 304, H03F 316, H03F 345

Patent

active

059630973

ABSTRACT:
A low-noise amplifier is disclosed that is capable of amplifying a signal with high gain (e.g., >60 dB) and low noise (e.g., <2 nV/Hz.sup.-1/2) over a large frequency bandwidth (e.g., from 1 Hz to 1 MHz) and with a high input impedance (e.g., >10.sup.6 .OMEGA.), high common mode rejection and high immunity to external noise sources. An illustrative embodiment of the present invention comprises: a first field-effect transistor having a first lead, a second lead and a third lead; a second field-effect transistor having a first lead, a second lead and a third lead, wherein the first lead of the first field-effect transistor is electrically connected to the first lead of the second field-effect transistor, the second lead of the first field-effect transistor is electrically connected to the second lead of the second field-effect transistor, and the third lead of the first field-effect transistor is electrically connected to the third lead of the second field-effect transistor; and a first bipolar junction transistor having a first lead, a second lead and a third lead, wherein the first lead of the first bipolar junction transistor is electrically connected to the first lead of the first field-effect transistor.

REFERENCES:
patent: 4578647 (1986-03-01), Sasamura
patent: 4801893 (1989-01-01), Perandi
patent: 5047665 (1991-09-01), Burt
W. T. Holman and J. A. Connelly, "A Compact Low Noise Operational Amplifier for a 1.2 .mu.m Digital CMOS Technology", IEEE Journal of Solid State Circuits, vol. 30 No. 6 Jun. 1995.
W. T. Holman and J. A. Connelly, "A Pseudo-BiCMOS High Gain-Bandwidth Low Noise Operational Amplifier Using a Darlington Input Stage", IEEE Symposium on Circuits and Systems, Apr. 30-May 3, 1995.

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