Method of making integrated circuits using metal silicide contac

Details Method of making integrated circuits using metal silicide contac Method of making integrated circuits using metal silicide contac

1982-12-02

1985-06-11

Roy, Upendra

Metal working

Method of mechanical manufacture

Electrical device making

29571, 29576B, 29578, 148 15, 148187, 357 34, 357 15, 357 91, 427 84, 427 88, H01L 21265, H01L 2124, C23F 102

Patent

active

045219524

ABSTRACT:
A metal silicide contact to silicon devices which has broad application to almost all of the variety of silicon semiconductor devices is described. This contact with a substantial side component has particular advantage as the base contact for a bipolar transistor. However, contacts can be made to regions of any desired device regions with a variety of P+, N+, P, N, P-, N- and so forth conductivity types. Further, the contact can be an ohmic or Schottky contact.

REFERENCES:
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patent: 4338138 (1982-07-01), Cavaliere et al.
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patent: 4400866 (1983-08-01), Yeh et al.
patent: 4419810 (1983-12-01), Riseman
Campbell et al., IBM-TDB, 25 (1983), 6624.
Berenbaum et al., IBM-TDB, 22 (1980), 3206.

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